It was primarily for this reason that CMOS became the most widely used technology to be implemented in VLSI chips. These characteristics allow CMOS to integrate a high density of logic functions on a chip. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, like NMOS logic or transistor–transistor logic (TTL), which normally have some standing current even when not changing state. Since one transistor of the MOSFET pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Two important characteristics of CMOS devices are high noise immunity and low static power consumption. As of 2011, 99% of IC chips, including most digital, analog and mixed-signal ICs, were fabricated using CMOS technology. CMOS has since remained the standard fabrication process for MOSFET semiconductor devices in VLSI chips. CMOS overtook NMOS logic as the dominant MOSFET fabrication process for very large-scale integration (VLSI) chips in the 1980s, also replacing earlier transistor–transistor logic (TTL) technology. RCA commercialized the technology with the trademark 'COS-MOS' in the late 1960s, forcing other manufacturers to find another name, leading to 'CMOS' becoming the standard name for the technology by the early 1970s. Wanlass later filed US patent 3,356,858 for CMOS circuitry and it was granted in 1967. The CMOS process was originally conceived by Frank Wanlass at Fairchild Semiconductor and presented by Wanlass and Chih-Tang Sah at the International Solid-State Circuits Conference in 1963. CMOS technology is also used for analog circuits such as image sensors ( CMOS sensors), data converters, RF circuits ( RF CMOS), and highly integrated transceivers for many types of communication. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits. Complementary metal–oxide–semiconductor ( CMOS, pronounced 'sea-moss', /siːmɑːs/, /-ɒs/) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions.

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